Search results for "Electron trap"

showing 4 items of 4 documents

Computer Simulations of I-Center Annealing in KCl and KBr Crystals. Theoretical Interpretation of Thermostimulated Experiments

1995

Results of computer simulations of the kinetics of correlated annealing of pairs of close α–I and F–I centers in KCI and KBr crystals, enhanced by I-center diffusion and Coulomb or elastic attractions, respectively, are presented. Special attention is paid to the conditions under which multi-stage annealing stages arise as it has been observed experimentally more than once. Our general conclusions are: (i) a weak elastic interaction affects the recombination kinetics and the survival probability even for relatively well-separated F–I pairs, the more so is true for the case of Coulomb attraction between charged α–I pairs; (ii) the multi-step (kink) structure arises only for close (typically,…

CrystallographySurvival probabilityChemistryAnnealing (metallurgy)Vacancy defectKineticsCoulombElectron trappingCondensed Matter PhysicsMolecular physicsRecombinationElectronic Optical and Magnetic MaterialsIonphysica status solidi (b)
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Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence

2007

The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…

Materials scienceCarrier transportConducting polymersGeneral Physics and AstronomyOrganic light emitting diodesElectroluminescencelaw.inventionCurrent density:FÍSICA [UNESCO]lawPhenyleneOLEDSpontaneous emissionMinority carriersbusiness.industryUNESCO::FÍSICABiasingLight emitting diodesElectroluminescenceBias voltageElectron-hole recombinationOptoelectronicsElectron trapsbusinessConducting polymers ; Organic light emitting diodes ; Electron-hole recombination ; Electroluminescence ; Minority carriers ; Electron traps ; Current densityCurrent densityOrder of magnitudeLight-emitting diode
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Charge trapping processes and energy transfer studied in lead molybdate by EPR and TSL

2019

Abstract Charge trapping and energy transfer processes are investigated in PbMoO4 single crystals by electron paramagnetic resonance (EPR) and wavelength-resolved thermally stimulated luminescence (TSL) in a correlated manner. New signals produced by two differently perturbed Mo5+ centers (Mo2 and Mo3) were observed in EPR spectra measured in the crystals after 420 nm light irradiation. Two sets of spin-Hamiltonian parameters, g tensor and the 95,97Mo, 207Pb (super) hyperfine tensors, have been determined and analyzed in terms of crystal field and LCAO-MO theories. A significant overlap of the Mo 5d1 and 6s6p ligand Pb orbitals was deduced for the Mo3 whereas the Mo2 center seemed to be not…

Materials scienceLead molybdateBiophysics02 engineering and technologyTrapping010402 general chemistry01 natural sciencesBiochemistryMolecular physicsSpectral lineWavelength resolved TSLElectron traplaw.inventionCrystallawElectron paramagnetic resonanceHyperfine structureGeneral ChemistryRadioluminescence021001 nanoscience & nanotechnologyCondensed Matter PhysicsAtomic and Molecular Physics and Optics0104 chemical sciencesFIS/01 - FISICA SPERIMENTALERadioluminescenceCharge carrierEPR0210 nano-technologyLuminescenceJournal of Luminescence
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Photoconductive properties of Bi2S3nanowires

2015

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…

Materials sciencePhotoconductivityPHOTODETECTORSThin filmsPhotoconductivity spectrumAluminaNanowireGeneral Physics and AstronomyNanotechnologySemiconductor growth02 engineering and technology010402 general chemistryNanofabrication01 natural sciencesSemiconductor materialsTHIN-FILMSThin filmONE-DIMENSIONAL NANOSTRUCTURESArraysPhotocurrentOne-dimensional nanostructuresMembranesNanowire surfaceNanowiresbusiness.industryAnodizingPhotoconductivityPhotodetectors021001 nanoscience & nanotechnologyCharge carrier trappingARRAYS0104 chemical sciencesMembraneNanolithographyIllumination intensityAnodized aluminaPhotoconductive propertiesSemiconductor quantum wiresOptoelectronicsAlumina membranesCharge carrierElectron trapsPhoton energy0210 nano-technologybusinessBismuth compoundsJournal of Applied Physics
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